Excess Low-Frequency Noise in AlGaN/GaN-based High-Electron-Mobility Transistors

Applied Physics Letters - United States
doi 10.1063/1.1463202
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Prostate Specific Antigen Detection Using AlGaN∕GaN High Electron Mobility Transistors

Applied Physics Letters
AstronomyPhysics
2007English

Studies of Traps in AlGaN/GaN High Electron Mobility Transistors on Silicon

English

Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors

English

Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2010English

Effect of Image Charges in the Drain Delay of AlGaN∕GaN High Electron Mobility Transistors

Applied Physics Letters
AstronomyPhysics
2008English

Fast Electrical Detection of Hg(II) Ions With AlGaN∕GaN High Electron Mobility Transistors

Applied Physics Letters
AstronomyPhysics
2007English

Study of Deep Traps in AlGaN/GaN High-Electron Mobility Transistors by Electrical Characterization and Simulation

Journal of Applied Physics
AstronomyPhysics
2019English

Physisorption of Functionalized Gold Nanoparticles on AlGaN/GaN High Electron Mobility Transistors for Sensing Applications

Applied Physics Letters
AstronomyPhysics
2013English

Thermal Properties of AlGaN/GaN High Electron Mobility Transistors on 4H and 6H SiC Substrates

Physica Status Solidi (A) Applications and Materials Science
SurfacesElectronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsFilmsCoatingsElectronicInterfaces
2014English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy