(PDF) Characterization of In-Grown Stacking Faults in

Characterization of In-Grown Stacking Faults in 4H–SiC (0001) Epitaxial Layers and Its Impacts on High-Voltage Schottky Barrier Diodes

Applied Physics Letters - United States

doi 10.1063/1.1997277

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August 1, 2005

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AIP Publishing

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