Forward Voltage Degradation of 4h-SiC Pin Diodes and High Voltage 4h-SiC Pin Diodes on the (000-1) C-Face With Reduced Forward Degradation
IEEJ Transactions on Industry Applications - Japan
doi 10.1541/ieejias.128.1013
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Date
January 1, 2008
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Institute of Electrical Engineers of Japan (IEE Japan)