Steady-State Thermally Annealed GaAs With Room-Temperature-Implanted Si

Applied Physics Letters - United States
doi 10.1063/1.91637
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Activation Analysis of Rapid Thermally Annealed Si and Mg Implanted Semi-Insulating GaAs

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
1989English

Study of Si-Implanted and Thermally Annealed Layers of Silicon by Using X-Ray Grazing Incidence Methods

Acta Physica Polonica A
AstronomyPhysics
2002English

Room-Temperature Ferromagnetism of Cu-Implanted GaN

Applied Physics Letters
AstronomyPhysics
2007English

Shift in Room-Temperature Photoluminescence of Low-Fluence Si+-Implanted SiO2films Subjected to Rapid Thermal Annealing

Science and Technology of Advanced Materials
Materials Science
2008English

Room Temperature Ferromagnetism in Cubic GaN Epilayers Implanted With Mn+ Ions

Applied Physics Letters
AstronomyPhysics
2004English

Defects Annealing of Si+ Implanted GaAs at RT and 100°C

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
1987English

Room-Temperature Spin Injection From Fe Into GaAs

Physical Review Letters
AstronomyPhysics
2001English

Room-Temperature Solid-State Maser

Nature
Multidisciplinary
2012English

Wet Chemical Digital Etching of GaAs at Room Temperature

Journal of the Electrochemical Society
SurfacesCondensed Matter PhysicsOpticalElectrochemistrySustainabilityMaterials ChemistryMagnetic MaterialsRenewable EnergyFilmsCoatingsElectronicthe Environment
1996English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy