Wet Chemical Digital Etching of GaAs at Room Temperature

Journal of the Electrochemical Society - United States
doi 10.1149/1.1837266
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Electrochemical Society

Related search

Simulation of Anisotropic Wet-Chemical Etching Using a Physical Model

1999English

Room-Temperature Spin Injection From Fe Into GaAs

Physical Review Letters
AstronomyPhysics
2001English

Field Emission Properties From P-Type GaAs Emitter Fabricated by Wet Etching Process.

SHINKU
2002English

Connected AZO Nanorods for Sensitivity Enhancement of Chemical Sensors at Room Temperature

2018English

Steady-State Thermally Annealed GaAs With Room-Temperature-Implanted Si

Applied Physics Letters
AstronomyPhysics
1980English

I - V Characteristics of Gas Sensors Based on Tin Dioxide Thin Filmsin Wet Air at Room Temperature

Physical and Chemical Aspects of the Study of Clusters, Nanostructures and Nanomaterials
2018English

Selective Wet Etching of GaAs on AlxGa1−xAs for AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor

Journal of Applied Physics
AstronomyPhysics
1998English

Electrorecovery of Actinides at Room Temperature

ECS Meeting Abstracts
2008English

Anisotropic Chemical Etching of III—V Crystals Dissolution Slowness Surface and Application to GaAs

Active and Passive Electronic Components
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2004English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy