Extreme Sensitivity of the Electric-Field-Induced Band Gap to the Electronic Topological Transition in Sliding Bilayer Graphene

Scientific Reports - United Kingdom
doi 10.1038/srep17490
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Springer Science and Business Media LLC

Related search

Electric-Field Dependence of G-Band Spectra in Bilayer Graphene

2012English

Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2019English

Transport Gap in Suspended Bilayer Graphene at Zero Magnetic Field

Physical Review B
2012English

Influence of Band-Gap Opening on Ballistic Electron Transport in Bilayer Graphene and Graphene Nanoribbon FETs

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2011English

Electric Field Dependence of Excitation Spectra in AB-Stacked Bilayer Graphene

Scientific Reports
Multidisciplinary
2013English

Controlling the Electronic Structure of Bilayer Graphene

Science
MultidisciplinaryPhilosophy of ScienceHistory
2006English

Band Gap Control in Bilayer Graphene by Co-Doping With B-N Pairs

Scientific Reports
Multidisciplinary
2018English

Four-Band Tunneling in Bilayer Graphene

Physical Review B
2013English

The Conduction Gap in Double Gate Bilayer Graphene Structures

Journal of Physics Condensed Matter
Materials ScienceCondensed Matter Physics
2010English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy