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Compact Threshold-Voltage Model for Short-Channel Partially-Depleted (PD) SOI Dynamic-Threshold MOS (DTMOS) Devices
IEEE Transactions on Electron Devices
- United States
doi 10.1109/16.974770
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Categories
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Date
January 1, 2002
Authors
J.B. Kuo
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
