Amanote Research

Amanote Research

    RegisterSign In

Investigation of Deep Levels in Bulk GaN

doi 10.3384/lic.diva-112262
Full Text
Open PDF
Abstract

Available in full text

Date

November 20, 2014

Authors
Tran Thien Duc
Publisher

Linköping University Electronic Press


Related search

Carrier Dynamics in Bulk GaN

Journal of Applied Physics
AstronomyPhysics
2012English

High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates

Applied Physics Letters
AstronomyPhysics
2000English

Ammonothermal Bulk GaN Growth and Its Processing

Sensors and Materials
Materials ScienceInstrumentation
2014English

Electroabsorption Modulators Based on Bulk GaN Films and GaN/AlGaN Multiple Quantum Wells

Journal of Applied Physics
AstronomyPhysics
2011English

Experimental Characterization of Impact Ionization Coefficients for Electrons and Holes in GaN Grown on Bulk GaN Substrates

Applied Physics Letters
AstronomyPhysics
2018English

Electronic States of Deep Trap Levels in A-Plane GaN Templates Grown on R-Plane Sapphire by HVPE

Scientific Reports
Multidisciplinary
2018English

Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate

Applied Physics Express
EngineeringAstronomyPhysics
2016English

Optimization of Low Temperature GaN Buffer Layers for Halide Vapor Phase Epitaxy Growth of Bulk GaN

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
2013English

Deep Levels in Semiconductors

Canadian Journal of Chemistry
Organic ChemistryCatalysisChemistry
1985English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy