Optimization of Low Temperature GaN Buffer Layers for Halide Vapor Phase Epitaxy Growth of Bulk GaN

Journal of Crystal Growth - Netherlands
doi 10.1016/j.jcrysgro.2012.12.016
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Elsevier BV

Related search

Photoluminescence of Carbon in Situ Doped GaN Grown by Halide Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
1998English

Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer Between High-Temperature-Grown GaN

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
1998English

Growth and Characterization of Gan Bulk Crystals via Vapor Phase Transport

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2000English

Characterization of Free-Standing Hydride Vapor Phase Epitaxy GaN

Applied Physics Letters
AstronomyPhysics
2001English

Growth of GaN Film on 150mm Si (111) Using Multilayer AlN∕AlGaN Buffer by Metal-Organic Vapor Phase Epitaxy Method

Applied Physics Letters
AstronomyPhysics
2007English

Catalyst-Free Growth of High-Optical Quality GaN Nanowires by Metal-Organic Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2011English

Effects of Growth Temperature on GaN Nucleation Layers

Applied Physics Letters
AstronomyPhysics
1999English

Optical Properties of Metastable Shallow Acceptors in Mg-Doped GaN Layers Grown by Metal-Organic Vapor Phase Epitaxy

2010English

Growth Modes of InN (000-1) on GaN Buffer Layers on Sapphire

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
SurfacesFilmsInterfacesCondensed Matter PhysicsCoatings
2005English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy