Replacement of Surface in Atoms by Ga During Migration-Enhanced Epitaxy

doi 10.7567/ssdm.1990.b-4-6
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Japan Society of Applied Physics

Related search

Growth Characteristics of AlN on Sapphire Substrates by Modified Migration-Enhanced Epitaxy

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
2009English

Surface Roughening During Low Temperature Si(100) Epitaxy

Journal of Applied Physics
AstronomyPhysics
1997English

Magnetic Behaviors of (Ga,Mn)As/Co2FeAl Bilayers Grown by Molecular-Beam Epitaxy

2011English

Surface Smoothing of GaAs Microstructure by Atomic Layer Epitaxy

Applied Physics Letters
AstronomyPhysics
1999English

Gallium Desorption Kinetics on (0001) GaN Surface During the Growth of GaN by Molecular-Beam Epitaxy

Applied Physics Letters
AstronomyPhysics
2006English

Enhanced Sb Incorporation in InAsSb Nanowires Grown by Metalorganic Vapor Phase Epitaxy

Applied Physics Letters
AstronomyPhysics
2011English

Migration Through the Extracellular Matrix by the Parasitic Protozoan Leishmania Is Enhanced by Surface Metalloprotease Gp63

Infection and Immunity
ParasitologyInfectious DiseasesImmunologyMicrobiology
2003English

Special Issue: Characterization of Crystal Growing Surface by "In-Situ Photon-Probing". In Situ Characterization of GaAs and InP Surfaces by Surface Photo-Absorption During Chloride Atomic Layer Epitaxy.

SHINKU
1993English

Electronegativity Determination of Individual Surface Atoms by Atomic Force Microscopy

Nature Communications
AstronomyGeneticsMolecular BiologyBiochemistryChemistryPhysics
2017English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy