Bottom-Gate Thin-Film Transistors Based on GaN Active Channel Layer

IEEE Electron Device Letters - United States
doi 10.1109/led.2013.2244556
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Related search

Molecular Doping Effect in Bottom-Gate, Bottom-Contact Pentacene Thin-Film Transistors

Journal of Applied Physics
AstronomyPhysics
2011English

Thin-Film Transistors: Top-Split-Gate Ambipolar Organic Thin-Film Transistors (Adv. Electron. Mater. 5/2018)

Advanced Electronic Materials
OpticalElectronicMagnetic Materials
2018English

Width Dependent Electrically Stress Degradation of Bottom Gate Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

2009English

A Study on Materials Interactions Between Mo Electrode and InGaZnO Active Layer in InGaZnO-based Thin Film Transistors

Journal of Materials Research
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2010English

Demonstration of Flexible Thin Film Transistors With GaN Channels

Applied Physics Letters
AstronomyPhysics
2016English

Positive Charge Trapping Phenomenon in N-Channel Thin-Film Transistors With Amorphous Alumina Gate Insulators

Journal of Applied Physics
AstronomyPhysics
2016English

Dual-Gate Low-Voltage Transparent Electric-Double-Layer Thin-Film Transistors With a Top Gate for Threshold Voltage Modulation

RSC Advances
ChemistryChemical Engineering
2020English

Feasibility of Large-Scale MoS2 Thin-Film Transistors on a GaN Substrate

English

Electric Double Layer Gate Field-Effect Transistors Based on Si

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2010English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy