Amanote Research
Register
Sign In
Feasibility of Large-Scale MoS2 Thin-Film Transistors on a GaN Substrate
doi 10.1021/acsaelm.9b00236.s001
Full Text
Open PDF
Abstract
Available in
full text
Date
Unknown
Authors
Unknown
Publisher
American Chemical Society (ACS)
Related search
Demonstration of Flexible Thin Film Transistors With GaN Channels
Applied Physics Letters
Astronomy
Physics
Bottom-Gate Thin-Film Transistors Based on GaN Active Channel Layer
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Thickness-Dependent Electron Mobility of Single and Few-Layer MoS2 Thin-Film Transistors
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
C60 Thin Film Transistors
Applied Physics Letters
Astronomy
Physics
Silicone Substrate With in Situ Strain Relief for Stretchable Thin-Film Transistors
Applied Physics Letters
Astronomy
Physics
Organic Thin-Film Transistors: Laser-Printed Organic Thin-Film Transistors (Adv. Mater. Technol. 11/2017)
Advanced Materials Technologies
Mechanics of Materials
Materials Science
Industrial
Manufacturing Engineering
Growth of GaN Thin Film on Amorphous Glass Substrate by Direct-Current Pulse Sputtering Deposition Technique
Coatings
Surfaces
Films
Coatings
Materials Chemistry
Interfaces
Effect of Illumination on Organic Polymer Thin-Film Transistors
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Far-Uv Annealed Inkjet-Printed In2O3 Semiconductor Layers for Thin-Film Transistors on a Flexible Polyethylene Naphthalate Substrate
ACS Applied Materials & Interfaces
Medicine
Materials Science
Nanotechnology
Nanoscience
