Sputtering Induced Changes in Defect Morphology and Dopant Diffusion for Si Implanted GaAs: Influence of Ion Energy and Implant Temperature
Materials Research Society Symposium - Proceedings - United States
doi 10.1557/proc-354-337
Full Text
Open PDFAbstract
Available in full text
Date
January 1, 1994
Authors
Publisher
Cambridge University Press (CUP)