(PDF) Lateral Buried Growth of N+-InGaAs Source/Drain

Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-Type MOSFET

doi 10.7567/ssdm.2008.g-2-5

Full Text

Abstract

Available in full text

Date

September 24, 2008

Authors

Publisher

The Japan Society of Applied Physics

Related search

Ultralow Resistance, Nonalloyed Ohmic Contacts to N-InGaAs

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English

Erratum To: Controlling N-Type Carrier Density From Er Doping of InGaAs With MBE Growth Temperature

Journal of Electronic Materials

Electronic Engineering

Condensed Matter Physics

Materials Chemistry

Magnetic Materials

English

Growth and Properties of InGaAs/FeAl/InAlAs/InP Heterostructures for Buried Reflector/Interconnect Applications in InGaAs Thermophotovoltaic Devices

English

Reliability of Buried InGaAs Channel N-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress

Frontiers in Physics

Materials Science

Theoretical Chemistry

Mathematical Physics

English

Photoluminescence of InGaAs/GaAsBi/InGaAs Type-Ii Quantum Wells Grown by Gas Source Molecular Beam Epitaxy

Semiconductor Science and Technology

Electronic Engineering

Condensed Matter Physics

Materials Chemistry

Magnetic Materials

English

Characteristics of N-Type Asymmetric Schottky-Barrier Transistors With Silicided Schottky-Barrier Source and Heavily N-Type Doped Channel and Drain

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Ultra Low-Resistance Palladium Silicide Ohmic Contacts to Lightly Doped N-InGaAs

Journal of Applied Physics

English

Selectively-Undercut Traveling-Wave Electroabsorption Modulators Incorporating a P-InGaAs Contact Layer

Molecular Physics,

English

Electroluminescence of Composite Channel InAlAs/InGaAs/InP/InAlAs High Electron Mobility Transistor

Journal of Applied Physics

English