Amanote Research

Amanote Research

    RegisterSign In

Ultimate Scaling of High-K Gate Dielectrics: Current Status and Challenges

doi 10.7567/ssdm.2012.d-1-1
Full Text
Open PDF
Abstract

Available in full text

Date

September 25, 2012

Authors
T. AndoM. M. MartinE. A. CartierB. P. LinderJ. RozenK. Choi
Publisher

The Japan Society of Applied Physics


Related search

Noise in Si and SiGe MOSFETs With High-K Gate Dielectrics

AIP Conference Proceedings
AstronomyPhysics
2005English

Lifetime of High-K Gate Dielectrics and Analogy With Strength of Quasibrittle Structures

Journal of Applied Physics
AstronomyPhysics
2009English

In-Plane-Gate Flexible Single-Crystalline Silicon Thin-Film Transistors With High-K Gate Dielectrics on Plastic Substrates

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2019English

High K Dielectrics on High-Mobility Substrates: The Interface!

Electrochemical Society Interface
Electrochemistry
2011English

Materials Fundamentals of Gate Dielectrics

2005English

Challenges of Electrical Measurements of Advanced Gate Dielectrics in Metal-Oxide-Semiconductor Devices

AIP Conference Proceedings
AstronomyPhysics
2003English

High Performance ZnO Thin-Film Transistors Using High-Ҝ TiHfO Gate Dielectrics

2009English

Current Status and Challenges of Ion Imprinting

Journal of Materials Chemistry A
Materials ScienceChemistrythe EnvironmentSustainabilityRenewable Energy
2015English

Dependences of Device Performances on Interfacial Layer Materials of High-K MISFETs Due to Wave Function Penetration Into Gate Dielectrics

2004English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy