Amanote Research
Register
Sign In
Materials Fundamentals of Gate Dielectrics
doi 10.1007/1-4020-3078-9
Full Text
Open PDF
Abstract
Available in
full text
Date
January 1, 2005
Authors
Unknown
Publisher
Springer-Verlag
Related search
Materials and Processing for Gate Dielectrics on Silicon Carbide (SiC) Surface
Soft Breakdown of Hafnium Oxynitride Gate Dielectrics
Journal of Applied Physics
Astronomy
Physics
The Characteristics of Hole Trapping in HfO2∕SiO2 Gate Dielectrics With TiN Gate Electrode
Applied Physics Letters
Astronomy
Physics
Degradation of Polycrystalline HfO2-based Gate Dielectrics Under Nanoscale Electrical Stress
Applied Physics Letters
Astronomy
Physics
Ultimate Scaling of High-K Gate Dielectrics: Current Status and Challenges
Dependences of Device Performances on Interfacial Layer Materials of High-K MISFETs Due to Wave Function Penetration Into Gate Dielectrics
IEEJ Fundamentals and Materials Society
IEEJ Transactions on Fundamentals and Materials
Electronic Engineering
Electrical
IEEJ Fundamentals and Materials Society
IEEJ Transactions on Fundamentals and Materials
Electronic Engineering
Electrical
IEEJ Fundamentals and Materials Society
IEEJ Transactions on Fundamentals and Materials
Electronic Engineering
Electrical
