Reversible Changes in the Lattice Site Structure for in Implanted Into GaN

Applied Physics Letters - United States
doi 10.1063/1.1485117
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Lattice Site Location Studies of Rare-Earths Implanted in ZnO Single-Crystals

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2002English

Annealing Behavior and Lattice Site Location of Er Implanted InGaN

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
High Energy PhysicsInstrumentationNuclear
2003English

Lattice Location of Implanted Cu in Si

Physica B: Condensed Matter
Electronic EngineeringCondensed Matter PhysicsOpticalElectricalMagnetic MaterialsElectronic
1999English

Oxygen Segregation and Electronic Structure Changes at Dislocations in GaN

Microscopy and Microanalysis
Instrumentation
2003English

On the Magnetic Properties of Gd Implanted GaN

Journal of Applied Physics
AstronomyPhysics
2008English

Annealing of Cd‐implanted GaAs: Defect Removal, Lattice Site Occupation, and Electrical Activation

Journal of Applied Physics
AstronomyPhysics
1993English

Solid-Phase Diffusion of Carbon Into GaN Using SiNx/CNx/GaN Structure

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2007English

On the Lattice Parameters of GaN

Applied Physics Letters
AstronomyPhysics
2007English

Electrical Characterization of Rare-Earth Implanted GaN

Physica B: Condensed Matter
Electronic EngineeringCondensed Matter PhysicsOpticalElectricalMagnetic MaterialsElectronic
2009English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy