Amanote Research
Register
Sign In
On the Lattice Parameters of GaN
Applied Physics Letters
- United States
doi 10.1063/1.2753122
Full Text
Open PDF
Abstract
Available in
full text
Categories
Astronomy
Physics
Date
July 16, 2007
Authors
V. Darakchieva
B. Monemar
A. Usui
Publisher
AIP Publishing
Related search
Determining Fundamental Parameters of QCD on the Lattice
Nuclear Physics B - Proceedings Supplements
The Determination of Lattice Parameters Using Single EBSD Patterns
Microscopy and Microanalysis
Instrumentation
Reversible Changes in the Lattice Site Structure for in Implanted Into GaN
Applied Physics Letters
Astronomy
Physics
Molecular Simulations and Lattice Dynamics Determination of Stillinger-Weber GaN Thermal Conductivity
Journal of Applied Physics
Astronomy
Physics
Critical Parameters for the Presence of a 2DEG in GaN/AlxGa1−xN Heterostructures
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
2D Materials: Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures (Small 14/2019)
Small
Materials Science
Nanoscience
Engineering
Biomaterials
Medicine
Biotechnology
Nanotechnology
Chemistry
The Effect of Insulator Layer Thickness on the Main Electrical Parameters in (Ni/Au)/AlxGa1−xN/AlN/GaN Heterostructures
Surface and Interface Analysis
Surfaces
Condensed Matter Physics
Interfaces
Materials Chemistry
Films
Coatings
Chemistry
HIGH TEMPERATURE LATTICE PARAMETERS OF ZnSiP2, ZnGeP2 AND CdGeP2
Le Journal de Physique Colloques
Stress Modulated Composition Fluctuation and Diffusion in Near Lattice Match AlInN/GaN
Microscopy and Microanalysis
Instrumentation
