Amanote Research
Register
Sign In
Random Discrete Dopant Induced Variability in Negative Capacitance Transistors
doi 10.1109/ulis.2018.8354732
Full Text
Open PDF
Abstract
Available in
full text
Date
March 1, 2018
Authors
Tapas Dutta
Vihar Georgiev
Asen Asenov
Publisher
IEEE
Related search
Random Dopant Model for Three-Dimensional Drift-Diffusion Simulations in Metal–oxide–semiconductor Field-Effect-Transistors
Applied Physics Letters
Astronomy
Physics
Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)
Advanced Electronic Materials
Optical
Electronic
Magnetic Materials
Impact of Scattering on Random Dopant Induced Current Fluctuations in Decanano MOSFETs
Sub-60 mV/decade Switching in 2D Negative Capacitance Field-Effect Transistors With Integrated Ferroelectric Polymer
Applied Physics Letters
Astronomy
Physics
Negative Capacitance for Electrostatic Supercapacitors
Advanced Energy Materials
Materials Science
the Environment
Sustainability
Renewable Energy
Negative Capacitance Beyond Ferroelectric Switches
Oxygen-Adsorption-Induced Anomalous Capacitance Degradation in Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors Under Hot-Carrier Stress
Journal of the Electrochemical Society
Surfaces
Condensed Matter Physics
Optical
Electrochemistry
Sustainability
Materials Chemistry
Magnetic Materials
Renewable Energy
Films
Coatings
Electronic
the Environment
Pruned Discrete Random Samples
Journal of Applied Probability
Mathematics
Statistics
Uncertainty
Probability
Flexible High Capacitance Gate Insulators for Organic Field Effect Transistors
Journal of Physics D: Applied Physics
Surfaces
Ultrasonics
Condensed Matter Physics
Acoustics
Optical
Magnetic Materials
Films
Coatings
Electronic