Novel Vertical 3D Structure of TaOx-based RRAM With Self-Localized Switching Region by Sidewall Electrode Oxidation

Scientific Reports - United Kingdom
doi 10.1038/srep21020
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Springer Science and Business Media LLC

Related search

TaOx-based Resistive Switching Memories: Prospective and Challenges

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2013English

Ultra-High LRS Nonlinearity and High Speed in HfOX Based Complementary Resistive Switch With Ti Electrode for Vertical RRAM

2013English

Switching Mechanism of TaOx ReRAM

2009English

Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2016English

High Switching Endurance in TaOx Memristive Devices

Applied Physics Letters
AstronomyPhysics
2010English

Formation Free and High-Performance Cross-Point Resistive Switching Memory Using Ir/TaOx/W Structure

2012English

Conducting Filament Engineering by Triple-Layer RRAM for Uniform Resistive Switching

2013English

29.8 SHARC: Self-Healing Analog With RRAM and CNFETs

2019English

Study of Multi-Level Characteristics for 3D Vertical Resistive Switching Memory

Scientific Reports
Multidisciplinary
2014English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy