Switching Mechanism of TaOx ReRAM

doi 10.7567/ssdm.2009.g-7-1
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Japan Society of Applied Physics

Related search

High Switching Endurance in TaOx Memristive Devices

Applied Physics Letters
AstronomyPhysics
2010English

TaOx-based Resistive Switching Memories: Prospective and Challenges

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2013English

Enhanced Resistive Switching Memory Characteristics and Mechanism Using a Ti Nanolayer at the W/TaOx Interface

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2013English

Volatile Resistive Switching in Cu/TaOx/Δ-Cu/Pt Devices

Applied Physics Letters
AstronomyPhysics
2012English

Direct Evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film

Scientific Reports
Multidisciplinary
2015English

Nonlinear and Complementary Resistive Switching Behaviors of Au/Ti/TaOx/TiN Devices Dependent on Ti Thicknesses

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
SurfacesElectronic EngineeringCondensed Matter PhysicsInstrumentationElectronicOpticalMaterials ChemistryElectricalMagnetic MaterialsFilmsProcess ChemistryCoatingsTechnology
2015English

Formation Free and High-Performance Cross-Point Resistive Switching Memory Using Ir/TaOx/W Structure

2012English

Correlation Between Filament Distribution and Resistive Switching Properties in ReRAM Consisting of Transition-Metal-Oxides

Journal of the Vacuum Society of Japan
SurfacesInstrumentationInterfacesSpectroscopyMaterials Science
2012English

Novel Vertical 3D Structure of TaOx-based RRAM With Self-Localized Switching Region by Sidewall Electrode Oxidation

Scientific Reports
Multidisciplinary
2016English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy