Transport Gap and Hysteretic Behavior of the Ising Quantum Hall Ferromagnets In|N|>0Landau Levels of Bilayer Graphene

Physical Review B
doi 10.1103/physrevb.90.245410
Full Text
Abstract

Available in full text

Date
Authors
Publisher

American Physical Society (APS)

Related search

Quantum Anomalous Hall State in Bilayer Graphene

Physical Review B
2010English

Tunable Fractional Quantum Hall Phases in Bilayer Graphene

Science
MultidisciplinaryPhilosophy of ScienceHistory
2014English

Ultra-Quantum 2D Materials: Graphene, Bilayer Graphene, and Other Hall Systems—New Non-Local Quantum Theory of Hall Physics

2016English

Topological Approach to Quantum Hall Effects and Its Important Applications: Higher Landau Levels, Graphene and Its Bilayer

European Physical Journal B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2017English

Transport Gap in Suspended Bilayer Graphene at Zero Magnetic Field

Physical Review B
2012English

Influence of Band-Gap Opening on Ballistic Electron Transport in Bilayer Graphene and Graphene Nanoribbon FETs

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2011English

Energy Gaps and Layer Polarization of Integer and Fractional Quantum Hall States in Bilayer Graphene

Physical Review Letters
AstronomyPhysics
2016English

Bilayer Quantum Hall Phase Transitions and the Orbifold Non-Abelian Fractional Quantum Hall States

Physical Review B
2011English

Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene

Physical Review X
AstronomyPhysics
2012English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy