Comparison of Plasma Doping With Implant for High Performance SOI CMOS Fabrication

doi 10.7567/ssdm.2008.b-9-2
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Japan Society of Applied Physics

Related search

High Functionalization of Dental Implant With Laser Fabrication

Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering
Mechanical Engineering
2015English

High-Performance Doping-Free Carbon-Nanotube-Based CMOS Devices and Integrated Circuits

Chinese Science Bulletin
2011English

A Study on High Temperature CMOS Circuits for Sensor Applications With SDB-SOI Wafer.

IEEJ Transactions on Sensors and Micromachines
Electronic EngineeringElectricalMechanical Engineering
1997English

Fabrication and Characterisation of High Resistivity SOI Substrates for Monolithic High Energy Physics Detectors

Solid-State Electronics
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
2008English

A 1.9 GHZ High Efficiency Class-F SOI CMOS Power Amplifier

2015English

Ultralow-Power CMOS/SOI Circuit Technology

IEEJ Transactions on Electronics, Information and Systems
Electronic EngineeringElectrical
2006English

Extremely-Thin SOI for Mainstream CMOS: Challenges and Opportunities

2010English

Comparison of Laser Performance for Diode-Pumped Tm:YLF of Various Doping Concentrations

2005English

Fabrication of Smart Electrochemical Sensor With CMOS Integrated Circuits

2009English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy