Effect of Auger Recombination and Leakage on the Droop in InGaN/GaN Quantum Well LEDs

Optics Express - United States
doi 10.1364/oe.22.0a1440
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Optical Society

Related search

Effect of Threading Defects on InGaN∕GaN Multiple Quantum Well Light Emitting Diodes

Applied Physics Letters
AstronomyPhysics
2007English

Photonic Crystal Effect on Light Emission From InGaN∕GaN Multi-Quantum-Well Structures

Applied Physics Letters
AstronomyPhysics
2007English

Electron Spillover Effects in InGaN∕GaN Quantum-Well Lasers

Journal of Applied Physics
AstronomyPhysics
2007English

Effect of Growth Interruption on Optical Properties of In-Rich InGaN∕GaN Single Quantum Well Structures

Journal of Applied Physics
AstronomyPhysics
2006English

InGaN/GaN Quantum Well Interconnected Microdisk Light Emitting Diodes

Applied Physics Letters
AstronomyPhysics
2000English

Dependence of Carrier Localization in InGaN∕GaN Multiple-Quantum Wells on Well Thickness

Applied Physics Letters
AstronomyPhysics
2006English

Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers

MRS Internet Journal of Nitride Semiconductor Research
1999English

X-Ray Reflectivity Method for the Characterization of InGaN/GaN Quantum Well Interface

Physica Status Solidi (B): Basic Research
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2017English

Nanoscopic Recombination Processes in InGaN/GaN Quantum Wells Emitting Violet, Blue, and Green Spectra

Physical Review B
2008English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy