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Dual-Mode Bipolar Resistance Switching in the HfO2 RRAM Device
doi 10.7567/ssdm.2014.a-2-2
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Date
September 9, 2014
Authors
H.Z. Zhang
K.S. Yew
D.S. Ang
C.J. Gu
X.P. Wang
Publisher
The Japan Society of Applied Physics
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