Bipolar Resistive Switching in a Single Layer Memory Device Based on a Conjugated Copolymer

Applied Physics Letters - United States
doi 10.1063/1.2778549
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Remote Control of Resistive Switching in TiO2 Based Resistive Random Access Memory Device

Scientific Reports
Multidisciplinary
2017English

Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2016English

Multifunctional Optoelectronic Device Based on Resistive Switching Effects

2018English

Dependence of Reactive Metal Layer on Resistive Switching in a Bi-Layer Structure Ta/HfOx Filament Type Resistive Random Access Memory

Applied Physics Letters
AstronomyPhysics
2014English

Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Scenario Using Novel Cu/GeOx/W Memory Device

2011English

A Forming-Free Bipolar Resistive Switching Behavior Based on ITO/V2O5/ITO Structure

Applied Physics Letters
AstronomyPhysics
2017English

Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2018English

Effect of Non-Lattice Oxygen on ZrO2-based Resistive Switching Memory

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2012English

Cyclic Electric Field Stress on Bipolar Resistive Switching Devices

Journal of Applied Physics
AstronomyPhysics
2013English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy