Characterization of Single Magnetic Particles With InAs Quantum-Well Hall Devices

Applied Physics Letters - United States
doi 10.1063/1.1827328
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Photoluminescence Characterization of Single Heterojunction Quantum Well Structures

Applied Physics Letters
AstronomyPhysics
1987English

Quantum Anomalous Hall Effect in Magnetically Doped InAs/GaSb Quantum Wells

Physical Review Letters
AstronomyPhysics
2014English

Optical Properties of Ultrathin InAs Quantum-Well-Heterostructures

Applied Physics Letters
AstronomyPhysics
2012English

Fractional Quantum Hall States in a Ge Quantum Well

Physical Review Letters
AstronomyPhysics
2016English

Quantum Well Optical Switching Devices

NATO ASI Series
1995English

Quantum State Transfer in Double‐quantum‐well Devices

Journal of Applied Physics
AstronomyPhysics
1994English

Fractional Quantum Hall State Atν=14in a Wide Quantum Well

Physical Review B
2009English

Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators

Physical Review Letters
AstronomyPhysics
2017English

Enhancement of Photoconductivity by Carrier Screening Effect in N-GaSb/N-InAs/P-GaSb Heterostructure With Single Deep Quantum Well

Журнал технической физики
2018English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy