Changes in Electrophysical Properties of Heavily Doped N-Ge Single Crystals Under the Influence of Thermoannealings

Semiconductor Physics, Quantum Electronics and Optoelectronics- Ukraine

doi 10.15407/spqeo18.01.053

Full Text

Abstract

Available in

Categories

Electronic Engineering

Molecular Physics,

Magnetic Materials

Date

March 25, 2015

Authors

Publisher

Co. Ltd. Ukrinformnauka

Related search

Temperature Dependence of Electron and Hole Mobilities in Heavily Impurity-Doped SiGe Single Crystals

Journal of Applied Physics

English

Temperature Dependence Dielectric Behavior of Ge-Doped Lead Scandium Tantalate Single Crystals

Journal of Theoretical and Applied Physics

English

Growth and Dielectric Properties of Ta-Doped La2Ti2O7 Single Crystals

Materials Science

Inorganic Chemistry

Chemical Engineering

Condensed Matter Physics

English

Photoneutralization of the Fe3+Centers in the ZnSe Crystals Heavily Doped With Iron

Acta Physica Polonica A

English

Influence of Strain on the Electrical Properties of Ge Channel in Modulation-Doped P-Si0.5Ge0.5/Ge/Si1-xGex Heterostructure

English

Microstructural, Optical and Electrical Properties of Cl-Doped CdTe Single Crystals

Materials Science-Poland

Mechanics of Materials

Materials Science

Condensed Matter Physics

Mechanical Engineering

English

Structural and Mechanical Properties on Tb3+ Doped KBR Single Crystals

International Journal of Advance Engineering and Research Development

English

Four-Wave Mixing With Large Stokes Shifts in Heavily Ge-Doped Silica Fibers

Molecular Physics,

English

Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond

Physical Review Applied

English