(PDF) High-Rate Growth of Defect-Free Epitaxial Si at Low

High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD

doi 10.7567/ssdm.2005.p8-3

Full Text

Open PDF

Abstract

Available in full text

Date

January 1, 2005

Authors

Publisher

The Japan Society of Applied Physics

Related search

Hydrogen Termination of CVD Diamond Films by High-Temperature Annealing at Atmospheric Pressure

Journal of Chemical Physics

Medicine

Theoretical Chemistry

English

High-Rate Deposition of Amorphous Silicon Thin Films by Atmospheric Pressure Plasma Chemical Vapor Deposition. (1st Report). Design and Production of the Atmospheric Pressure Plasma CVD Apparatus With Rotary Electrode.

Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering

Mechanical Engineering

1999

English

Epitaxial Growth of 3c-SiC (111) on Si via Laser CVD Carbonization

Journal of Asian Ceramic Societies

Composites

Ceramics

2019

English

Low-Temperature Atmospheric Pressure Plasma-Enhanced CVD of Nanocomposite Coatings “Molybdenum Disulfide (Filler)-Silicon Oxide (Matrix)”

Advanced Materials Interfaces

Mechanics of Materials

Mechanical Engineering

2017

English

High Rate Growth of Microcrystalline Silicon by VHF-GD at High Pressure

English

Role of Hydrogen in High-Yield Growth of Boron Nitride Nanotubes at Atmospheric Pressure by Induction Thermal Plasma

English

Interface Properties of SiOxNy Layer on Si Prepared by Atmospheric-Pressure Plasma Oxidation-Nitridation

Nanoscale Research Letters

Materials Science

Nanotechnology

Condensed Matter Physics

Nanoscience

2013

English

Improvement of Silicon Nitride Film Deposition Rate by Low Frequency Double Plasma CVD Methode.

SHINKU

1991

English

High-Rate Deposition of Amorphous Silicon Film by Atmospheric Pressure Plasma Chemical Vapor Deposition. (2nd Report). Investigation for Higher Deposition Rate.

Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering

Mechanical Engineering

2000

English

Amanote Research

High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD

doi 10.7567/ssdm.2005.p8-3

Full Text

Abstract

Date

Authors

Publisher

Related search

Hydrogen Termination of CVD Diamond Films by High-Temperature Annealing at Atmospheric Pressure

High-Rate Deposition of Amorphous Silicon Thin Films by Atmospheric Pressure Plasma Chemical Vapor Deposition. (1st Report). Design and Production of the Atmospheric Pressure Plasma CVD Apparatus With Rotary Electrode.

Epitaxial Growth of 3c-SiC (111) on Si via Laser CVD Carbonization

Low-Temperature Atmospheric Pressure Plasma-Enhanced CVD of Nanocomposite Coatings “Molybdenum Disulfide (Filler)-Silicon Oxide (Matrix)”

High Rate Growth of Microcrystalline Silicon by VHF-GD at High Pressure

Role of Hydrogen in High-Yield Growth of Boron Nitride Nanotubes at Atmospheric Pressure by Induction Thermal Plasma

Interface Properties of SiOxNy Layer on Si Prepared by Atmospheric-Pressure Plasma Oxidation-Nitridation

Improvement of Silicon Nitride Film Deposition Rate by Low Frequency Double Plasma CVD Methode.

High-Rate Deposition of Amorphous Silicon Film by Atmospheric Pressure Plasma Chemical Vapor Deposition. (2nd Report). Investigation for Higher Deposition Rate.