Amanote Research
Register
Sign In
Analysis of RTN Signals in Resistive-Switching RAM Device and Its Correlation With Device Operations
doi 10.1109/icsict.2016.7998871
Full Text
Open PDF
Abstract
Available in
full text
Date
October 1, 2016
Authors
W. Zhang
Z. Chai
J. Ma
J. F. Zhang
Z. Ji
Publisher
IEEE
Related search
Stability and Its Mechanism in Ag/CoOx/Ag Interface-Type Resistive Switching Device
Scientific Reports
Multidisciplinary
Multifunctional Optoelectronic Device Based on Resistive Switching Effects
Remote Control of Resistive Switching in TiO2 Based Resistive Random Access Memory Device
Scientific Reports
Multidisciplinary
Artificial Synapse Emulated by Charge Trapping-Based Resistive Switching Device
Advanced Materials Technologies
Mechanics of Materials
Materials Science
Industrial
Manufacturing Engineering
Bottom Electrode Modification of ZrO$_{2}$ Resistive Switching Memory Device With Au Nanodots
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device
Nanomaterials
Materials Science
Chemical Engineering
Bipolar Resistive Switching in a Single Layer Memory Device Based on a Conjugated Copolymer
Applied Physics Letters
Astronomy
Physics
Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Scenario Using Novel Cu/GeOx/W Memory Device
Resistive Switching and Its Suppression in Pt/Nb:SrTiO3 Junctions
Nature Communications
Astronomy
Genetics
Molecular Biology
Biochemistry
Chemistry
Physics