Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors

doi 10.1017/9781316676899
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Cambridge University Press

Related search

Impact of Randomly Distributed Dopants on Ω-Gate Junctionless Silicon Nanowire Transistors

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2018English

Electric Double Layer Gate Field-Effect Transistors Based on Si

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2010English

The Zero Temperature Coefficient in Junctionless Nanowire Transistors

Applied Physics Letters
AstronomyPhysics
2012English

Investigation of Short-Channel Effects in Junctionless Nanowire Transistors

2011English

Vertically Integrated Nanowire Field Effect Transistors

English

Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors

Journal of Materials
2016English

Modelling of Insulated-Gate Field-Effect Transistors.

English

Interfacial Gate Resistance in Schottky-Barrier-Gate Field-Effect Transistors

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
1998English

Single-Crystalline CdTe Nanowire Field Effect Transistors as Nanowire-Based Photodetector

Physical Chemistry Chemical Physics
Theoretical ChemistryAstronomyPhysicsPhysical
2014English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy