Investigation of Short-Channel Effects in Junctionless Nanowire Transistors

doi 10.7567/ssdm.2011.p-3-12
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Japan Society of Applied Physics

Related search

The Zero Temperature Coefficient in Junctionless Nanowire Transistors

Applied Physics Letters
AstronomyPhysics
2012English

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors

2018English

Impact of Randomly Distributed Dopants on Ω-Gate Junctionless Silicon Nanowire Transistors

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2018English

Machine Learning Approach for Predicting the Effect of Statistical Variability in Si Junctionless Nanowire Transistors

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2019English

Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors

Journal of Materials
2016English

Energy-Balance Modelling of Short Channel Single-Gb Thin-Film Transistors

International Journal of Computational Science and Engineering
Computational TheorySimulationHardwareArchitectureComputational MathematicsMathematicsModelingSoftware
2006English

Hierarchical Simulation of Transport in Silicon Nanowire Transistors

Journal of Computational Electronics
Electronic EngineeringElectronicMolecular Physics,SimulationOpticalElectricalAtomicMagnetic MaterialsModelingOptics
2008English

Atomistic Full-Band Simulations of Silicon Nanowire Transistors: Effects of Electron-Phonon Scattering

Physical Review B
2009English

Ballistic Transport in Gate-All-Around Nanowire Transistors

The International Conference on Electrical Engineering
2010English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy