Characteristics of Unintentionally Doped and Lightly Si-Doped GaN Prepared via Pulsed Sputtering

AIP Advances- United States

doi 10.1063/1.5103185

Full Text

Abstract

Available in

Date

Authors

Publisher

AIP Publishing

Related search

Photoanodic Behavior of Vapor-Liquid-Solid–grown, Lightly Doped, Crystalline Si Microwire Arrays

Energy and Environmental Sciences
SustainabilityRenewable EnergyNuclear EnergyEnvironmental ChemistryEngineeringthe EnvironmentPollution
2012English

Silver-Doped Layers of Implants Prepared by Pulsed Laser Deposition

Journal of Computer and Communications
2013English

Evaluation of Fully Implanted Lightly Doped Drain (LDD) GaN-MISFET for Low Voltage and High Frequency Application

2013English

Breakdown Characteristics of MOVPE Grown Si-Doped GaAs Schottky Diodes

Solid-State Electronics
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
1999English

Structural Characterization of Ag and Mo-Doped Fe-Pt Thin Film Prepared by Radio Frequency Sputtering

Acta Crystallographica Section A Foundations of Crystallography
2002English

Optically Active Centers in Eu Implanted, Eu in Situ Doped GaN, and Eu Doped GaN Quantum Dots

Journal of Applied Physics
AstronomyPhysics
2009English

Nanocrystalline Au:Ag:SnO2 Films Prepared by Pulsed Magnetron Sputtering

Journal of Physics and Chemistry of Solids
Materials ScienceChemistryCondensed Matter Physics
2013English

The Ferroelectric Phase Transition in Lightly Doped Barium Titanate

Acta Crystallographica Section A Foundations of Crystallography
1993English

Thermoelectric and Micro-Raman Measurements of Carrier Density and Mobility in Heavily Si-Doped GaN Wires

Applied Physics Letters
AstronomyPhysics
2013English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2026 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy