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Evaluation of Fully Implanted Lightly Doped Drain (LDD) GaN-MISFET for Low Voltage and High Frequency Application
doi 10.7567/ssdm.2013.j-5-5l
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Date
September 26, 2013
Authors
I. Kume
A. Tanabe
H. Takeda
S. Saito
N. Furutake
T. Hase
Publisher
The Japan Society of Applied Physics
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