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Memory Characteristics of MOSFETs With Densely Stacked Silicon Nanocrystal Layers in the Gate Oxide Synthesized by Low-Energy Ion Beam
IEEE Electron Device Letters
- United States
doi 10.1109/led.2006.871183
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Categories
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Date
April 1, 2006
Authors
C.Y. Ng
T.P. Chen
L. Ding
S. Fung
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
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