Amanote Research
Register
Sign In
Simulation of Anisotropic Wet-Chemical Etching Using a Physical Model
doi 10.1109/memsys.1999.746850
Full Text
Open PDF
Abstract
Available in
full text
Date
January 1, 1999
Authors
J. van Suchtelen
K. Sato
E. van Veenendaal
A.J. Nijdam
J.G.E. Gardeniers
W.J.P. van Enckevort
M. Elwenspoek
Publisher
IEEE
Related search
Wet Chemical Digital Etching of GaAs at Room Temperature
Journal of the Electrochemical Society
Surfaces
Condensed Matter Physics
Optical
Electrochemistry
Sustainability
Materials Chemistry
Magnetic Materials
Renewable Energy
Films
Coatings
Electronic
the Environment
Erratum To: Fabrication of Geometric Sapphire Shaped InGaN/Al2O3 (S) LED Scribed by Using Wet Chemical Etching
Journal of the Korean Physical Society
Astronomy
Physics
Characterization of Prototype Silicon Pitch Artifacts Fabricated by Scanning Probe Lithography and Anisotropic Wet Etching
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Long-Period Waveguide Grating on Silicon-On-Insulator (SOI) Substrate Realized by Anisotropic Wet Etching
A Dry Etching Simulation With a New Surface Reaction Model.
SHINKU
Synchrotron-Radiation-Induced Wet Etching of Germanium
Applied Physics Letters
Astronomy
Physics
Anisotropic Chemical Etching of III—V Crystals Dissolution Slowness Surface and Application to GaAs
Active and Passive Electronic Components
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Forced and Natural Convection Effects on the Shape Evolution of Cavities During Wet Chemical Etching
Journal of the Electrochemical Society
Surfaces
Condensed Matter Physics
Optical
Electrochemistry
Sustainability
Materials Chemistry
Magnetic Materials
Renewable Energy
Films
Coatings
Electronic
the Environment
Chemical Etching of Silicon
Microscopy Today