Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT With a Realistic Ge Profile

doi 10.1109/sispad.1999.799300
Full Text
Abstract

Available in full text

Date

Unknown

Authors
Publisher

Japan Soc. Appl. Phys

Related search

Full Band Monte Carlo Simulation of AlInAsSb Digital Alloys

InfoMat
2020English

Modeling of Multi-Band Drift in Nanowires Using a Full Band Monte Carlo Simulation

Journal of Applied Physics
AstronomyPhysics
2016English

Hierarchy of Full Band Structure Models for Monte Carlo Simulation

VLSI Design
Electronic EngineeringComputer GraphicsHardwareElectricalArchitectureComputer-Aided Design
1998English

Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate

Advances in Condensed Matter Physics
Condensed Matter Physics
2018English

The Backward Monte Carlo Method for Semiconductor Device Simulation

Journal of Computational Electronics
Electronic EngineeringElectronicMolecular Physics,SimulationOpticalElectricalAtomicMagnetic MaterialsModelingOptics
2018English

Monte Carlo Device Simulations

2011English

A High-Performance SiGe HBT/BiCMOS Technology

IEEJ Transactions on Electronics, Information and Systems
Electronic EngineeringElectrical
2004English

Noise-Parameter Uncertainties: A Monte Carlo Simulation

Journal of Research of the National Institute of Standards and Technology
Engineering
2002English

A Simple Model for the Growth of Polycrystalline Si Using the Kinetic Monte Carlo Simulation

Modelling and Simulation in Materials Science and Engineering
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsSimulationComputer Science ApplicationsModeling
2000English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy