Amanote Research

Amanote Research

    RegisterSign In

Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate

Advances in Condensed Matter Physics - Egypt
doi 10.1155/2018/5863632
Full Text
Open PDF
Abstract

Available in full text

Categories
Condensed Matter Physics
Date

August 7, 2018

Authors
Chao ZhangJianjun SongJie ZhangShulin Liu
Publisher

Hindawi Limited


Related search

Excimer Laser Crystallization of A-Ge Nanowires on Si Substrate

2011English

Study on Axial and Radial Heterostructures of Si-Ge and Si-SiGe Nanowires

Microscopy and Microanalysis
Instrumentation
2005English

Ballistic Electro-Deposition of Thin Si, Ge, and SiGe Films

2013English

Characterization of Ge Photodetectors Fabricated on Vicinal Si Substrate

2008English

Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT With a Realistic Ge Profile

English

Ge-On-Si Laser Operating at Room Temperature

Optics Letters
OpticsAtomicMolecular Physics,
2010English

Low- And High-Field Transport Properties of Modulation-Doped Si/SiGe and Ge/SiGe Heterostructures: Effect of Phonon Confinement in Germanium Quantum Wells

Physical Review B
2000English

A Ge-On-Si Laser for Electronic-Photonic Integration

2009English

High Cooling Power Density of SiGe/Si Superlattice Microcoolers

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2001English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy