Vapor Phase Epitaxial Growth of AlAs by Chloride Transport Method

Journal of the Electrochemical Society - United States
doi 10.1149/1.2100706
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Electrochemical Society

Related search

Epitaxial Growth of Stoichiometry-Controlled CoAl Films on AlAs(001)

1993English

Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates

English

Recent Developments in the High-Rate Growth of SiC Epitaxial Layers by the Chemical Vapor Deposition Method

Journal of the Vacuum Society of Japan
SurfacesInstrumentationInterfacesSpectroscopyMaterials Science
2011English

Growth and Characterization of Gan Bulk Crystals via Vapor Phase Transport

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2000English

Current Transport Mechanisms in GaAs/AlAs Tunnel Structures Grown by Metal–organic Chemical Vapor Deposition

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
1986English

Growth of Aluminium Nitride Whisker by Vapor Phase Reaction

NIPPON KAGAKU KAISHI
1972English

Deep Levels Due to Induced Dislocations in Vapor Phase Epitaxial GaAs

1984English

Gold-Catalyzed Low-Temperature Growth of Cadmium Oxide Nanowires by Vapor Transport

English

Epitaxial Growth and Electrical Transport Properties of Cr2GeC Thin Films

Physical Review B
2011English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy