Atomistic Modeling of Ion Beam Induced Defects in Si: From Point Defects to Continuous Amorphous Layers.
Materials Research Society Symposium - Proceedings - United States
doi 10.1557/proc-810-c10.1
Full Text
Open PDFAbstract
Available in full text
Date
January 1, 2004
Authors
Publisher
Cambridge University Press (CUP)