DFM of Strained-Engineered MOSFETs Using Technology CAD

American Journal of Engineering and Applied Sciences - United States
doi 10.3844/ajeassp.2010.683.692
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Science Publications

Related search

High Performance, Strained-Ge, Heterostructure P-MOSFETs

English

Linearity and Mobility Degradation in Strained Si MOSFETs With Thin Gate Dielectrics

Solid-State Electronics
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
2010English

Technology CAD of Nanowire FinFETs

2010English

Modeling Techniques for Strained CMOS Technology

2009English

Technology CAD for Competitive Products

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
ElectricalSoftwareComputer GraphicsComputer-Aided DesignElectronic Engineering
1990English

Using CAD Tool for Substrate Parasitic Modeling in Smart Power Technology

IEEE Transactions on Circuits and Systems I: Regular Papers
Electronic EngineeringElectrical
2016English

Low Power Current-Mode Threshold Logic Gate Using Nano-Technology Double-Gate MOSFETs

The International Conference on Electrical Engineering
2010English

A Two-Dimensional Analytical Model of Fully Depleted Asymmetrical Dual Material Gate Double-Gate Strained-Si MOSFETs

Journal of Semiconductors
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
2011English

Recent Technology of CAD System for Garment Design

Sen'i Gakkaishi
Materials ScienceIndustrialPolymersManufacturing EngineeringPlasticsChemical Engineering
1990English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy