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Effective AlN-passivation for Improving ALD-Al2O3/GaAs Interface in MOS Structures Using MOCVD
doi 10.7567/ssdm.2013.j-8-3
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Date
September 27, 2013
Authors
T. Aoki
N. Fukuhara
T. Osada
H. Sazawa
M. Hata
T. Inoue
Publisher
The Japan Society of Applied Physics
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