Formation of High Quality Si1-xGex/Si Crystals Heterostructure Limited Area MBE Growth

doi 10.7567/ssdm.1990.c-7-3
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Japan Society of Applied Physics

Related search

Formation of Luminescent Si1-xGex/Si Quantum Wells With Abrupt Interfaces by Segregant-Assisted Growth

1993English

Improved Hole Mobilities and Thermal Stability in a Strained‐Si∕strained‐Si1−yGey∕strained‐Si Heterostructure Grown on a Relaxed Si1−xGex Buffer

Applied Physics Letters
AstronomyPhysics
2005English

Deep Photoluminescence in Si/Si1−xGex/Si Quantum Wells Created by Ion Implantation and Annealing

Applied Physics Letters
AstronomyPhysics
1994English

Bandgap Narrowing in Heavily Doped Base Regions of Si/Si1-xGex/Si Heterojunction Bipolar Transistors.

English

HRTEM and EELS Analysis of Interfacial Reactions in Ti/Si1-xGex/Si(100)

Microscopy and Microanalysis
Instrumentation
2003English

TEM Study of Silicide Formation and Microstructural Development of Ni/ Si1-xGex

Microscopy and Microanalysis
Instrumentation
2003English

Influence of Strain on the Electrical Properties of Ge Channel in Modulation-Doped P-Si0.5Ge0.5/Ge/Si1-xGex Heterostructure

1990English

Compensation Effect in the Rate of Solid-Phase Epitaxial Growth of Si1−xGex Alloys

Journal of Applied Physics
AstronomyPhysics
1997English

Low Pressure Chemical Vapor Deposition of Massive Si1-xGex Gradient Crystals and Applications in Short-Wavelength Diffraction

Surface and Coatings Technology
SurfacesCondensed Matter PhysicsInterfacesMaterials ChemistryFilmsCoatingsChemistry
1992English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy