Amanote Research
Register
Sign In
Defects in P-GaN and Their Atomic Structure
doi 10.1109/sim.2005.1511439
Full Text
Open PDF
Abstract
Available in
full text
Date
September 1, 2004
Authors
Z. Liliental-Weber
T. Tomaszewicz
D. Zakharov
J. Jasinski
M. O'Keefe
Publisher
IEEE
Related search
Structural Defects and Their Relationship to Nucleation of Gan Thin Films
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Atomic Structure of Pyramidal Defects in GaN:Mg: Influence of Annealing
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Atomic Structure of Defects in GaN:Mg Grown With Ga Polarity
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Atomic-Scale Structure and Properties of Highly Stable Antiphase Boundary Defects in Fe3O4
Nature Communications
Astronomy
Genetics
Molecular Biology
Biochemistry
Chemistry
Physics
Atomic Defects and Diffusion in Metals
Laser Repair of Defects in GaN LEDs
Optik & Photonik
Effects of P-GaN Capping Layer on the Current Collapse Behaviors in Normally-Off P-GaN Gate AlGaN/GaN HFETs
Infrared Absorption of Hydrogen-Related Defects in Ammonothermal GaN
Applied Physics Letters
Astronomy
Physics
Magnetically Active Vacancy Related Defects in Irradiated GaN Layers
Applied Physics Letters
Astronomy
Physics