Amanote Research
Register
Sign In
Inverse Resistance Change Cr2Ge2Te6Based PCRAM Enabling Ultralow-Energy Amorphization
doi 10.1021/acsami.7b16755.s001
Full Text
Open PDF
Abstract
Available in
full text
Date
Unknown
Authors
Unknown
Publisher
American Chemical Society (ACS)
Related search
Atomistic Simulations of Resistance to Amorphization by Radiation Damage
Physical Review B
Ultralow Resistance, Nonalloyed Ohmic Contacts to N-InGaAs
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Ultralow Resistance Ohmic Contacts for P-Channel InGaSb Field-Effect Transistors
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Boron-Enhanced Diffusion of Boron From Ultralow-Energy Boron Implantation
Enabling Positive Change: Flow and Complexity in Daily Experience
Yielding Behavior and Change in Dislocation Substructure in an UltraLow Carbon Martensitic Steel
Tetsu-To-Hagane/Journal of the Iron and Steel Institute of Japan
Alloys
Condensed Matter Physics
Metals
Theoretical Chemistry
Materials Chemistry
Physical
Inverse Problem – Reconstruction of Dark Energy Models
Modern Physics Letters A
Astrophysics
Nuclear
High Energy Physics
Astronomy
Physics
How the Nature of the Chemical Bond Governs Resistance to Amorphization by Radiation Damage
Physical Review B
Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory
