Influence of Undoped‐AlGaN Final Barrier of MQWs on the Performance of Lateral‐Type UVB LEDs

Physica Status Solidi (A) Applications and Materials Science - Germany
doi 10.1002/pssa.201970059
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Wiley

Related search

Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs

MATEC Web of Conferences
Materials ScienceEngineeringChemistry
2016English

Performance-Enhanced 365 Nm UV LEDs With Electrochemically Etched Nanoporous AlGaN Distributed Bragg Reflectors

Nanomaterials
Materials ScienceChemical Engineering
2019English

Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate

Applied Physics Express
EngineeringAstronomyPhysics
2016English

Dependence of Ni/AlGaN Schottky Barrier Height on Al Mole Fraction

Journal of Applied Physics
AstronomyPhysics
2000English

Over 13 mW Operation of 295-310nm AlGaN UVB LED With P-AlGaN Transparent Contact Layer for Real World Applications

Journal of Materials Chemistry C
Materials ChemistryChemistry
2019English

The Influence of Planning and Task Type on Second Language Performance

Studies in Second Language Acquisition
LinguisticsEducationLanguage
1996English

LEDs on HVPE Grown GaN Substrates: Influence of Macroscopic Surface Features

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2014English

On the Lateral Vibrations of Bars of Conical Type

Proceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character
1922English

Influence of Clealance Volume on the Performance of the Rolling Piston Type Rotary Compressor

Bulletin of the JSME
Engineering
1983English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy