Dependence of Ni/AlGaN Schottky Barrier Height on Al Mole Fraction

Journal of Applied Physics - United States
doi 10.1063/1.371944
Full Text
Abstract

Available in full text

Date
Authors
Publisher

AIP Publishing

Related search

Pressure Dependence of Schottky Barrier Height at Pt/GaAs Interface

Materials Science Forum
1991English

Effect of Rapid Thermal Annealing on Barrier Height and 1/F Noise of Ni/GaN Schottky Barrier Diodes

Applied Physics Letters
AstronomyPhysics
2015English

Impact of Surface Treatment on Metal-Work-Function Dependence of Barrier Height of GaN-on-GaN Schottky Barrier Diode

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2018English

Relation Between Schottky Barrier Height and Crystallographic Alignment at Al/Si Interfaces.

Hyomen Kagaku
1994English

Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate

Applied Physics Express
EngineeringAstronomyPhysics
2016English

Effects of Chemical Treatment on Barrier Height and Ideality Factors of Au/GaN Schottky Diodes

Physica B: Condensed Matter
Electronic EngineeringCondensed Matter PhysicsOpticalElectricalMagnetic MaterialsElectronic
2009English

Inhomogeneous Barrier Height Effect on the Current–voltage Characteristics of an Au/N-InP Schottky Diode

Journal of Semiconductors
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
2015English

Reduction of Schottky Barrier Height for N-Type Ge Contact by Using Sn Electrode

2013English

Dependence of Spontaneous Polarization on Stacking Sequence in SiC Revealed by Local Schottky Barrier Height Variations Over a Partially Formed 8h-SiC Layer on a 4h-SiC Substrate

Applied Physics Letters
AstronomyPhysics
2011English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy