Переходной Процесс Выключения 4h-SiC Биполярного Транзистора Из Режима Глубокого Насыщения

Журнал технической физики
doi 10.21883/ftp.2017.09.44889.8540
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Ioffe Institute Russian Academy of Sciences

Related search

Incipient Plasticity in 4h-SiC During Quasistatic Nanoindentation

Journal of the Mechanical Behavior of Biomedical Materials
Mechanics of MaterialsBiomedical EngineeringBiomaterials
2014English

Total Dose Effects on 4h-SiC Bipolar Junction Transistors

Materials Science Forum
2017English

Neutron Radiation Effect on 4h-SiC MESFETs and SBDs

Journal of Semiconductors
Electronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsElectronic
2010English

On the Site Occupancy of Dopants in 4h-SiC

Microscopy and Microanalysis
Instrumentation
2003English

Graphene Epitaxially Grown on Vicinal 4h-SiC(0001) Substrates

e-Journal of Surface Science and Nanotechnology
SurfacesMechanics of MaterialsCondensed Matter PhysicsInterfacesNanoscienceBioengineeringFilmsBiotechnologyCoatingsNanotechnology
2009English

Nonlocal Effects in Thin 4h-SiC UV Avalanche Photodiodes

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2003English

Microscopic Raman Mapping of Epitaxial Graphene on 4h-SiC(0001)

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2012English

Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2016English

Charge State Switching of the Divacancy Defect in 4H -SiC

Physical Review B
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2018English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy