(PDF) Annealing Effects on Ge/SiO2Interface Structure in

Annealing Effects on Ge/SiO2Interface Structure in Wafer-Bonded Germanium-On-Insulator Substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes - Japan

doi 10.1143/jjap.50.04da13

Full Text

Abstract

Available in full text

Categories

Date

April 20, 2011

Authors

Osamu Yoshitake

Yoshiaki Nakamura

Hiromichi Isogai

Publisher

Japan Society of Applied Physics

Related search

Analysis of a Wafer Bonded Ge∕Si Heterojunction by Transmission Electron Microscopy

Applied Physics Letters

English

Ge Metal-Insulator-Semiconductor Structures With Ge3N4 Dielectrics by Direct Nitridation of Ge Substrates

Applied Physics Letters

English

Effect of Annealing on Charge Transfer in Ge Nanocrystal Based Nonvolatile Memory Structure

Journal of Applied Physics

English

Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates

Materials Science

Condensed Matter Physics

English

Guided-Wave Photodetectors in Germanium on Optical Chips in Silicon-On-Insulator

Journal of the European Optical Society

Molecular Physics,

English

Evolution of SiO2/Ge/HfO2(Ge) Multilayer Structure During High Temperature Annealing

Thin Solid Films

Materials Chemistry

Magnetic Materials

English

High-Speed Germanium Pin Photodiodes Integrated on Silicon-On-Insulator Nanophotonic Waveguides

English

Thermal Annealing Effects on the Structure and Electrical Properties of Al[sub 2]O[sub 3] Gate Dielectrics on Fully Depleted SiGe on Insulator

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English

Vertically Standing Ge Nanowires on GaAs(110) Substrates

Mechanics of Materials

Electronic Engineering

Mechanical Engineering

Materials Science

English