Evolution of SiO2/Ge/HfO2(Ge) Multilayer Structure During High Temperature Annealing

Thin Solid Films - Switzerland
doi 10.1016/j.tsf.2009.09.156
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Elsevier BV

Related search

Chemical States and Electronic Structure of a HfO2∕Ge(001) Interface

Applied Physics Letters
AstronomyPhysics
2005English

Ge Dots Embedded in SiO2 Obtained by Oxidation of Si/Ge/Si Nanostructures

Nanotechnology
Mechanics of MaterialsElectronic EngineeringMechanical EngineeringMaterials ScienceNanoscienceElectricalBioengineeringNanotechnologyChemistry
2006English

Ge Nanoparticles in SiO2 for Near Infrared Photodetectors With High Performance

Scientific Reports
Multidisciplinary
2019English

Electronic Structure of Ge-Si Superlattices Grown on Ge (001)

Semiconductor Science and Technology
Electronic EngineeringCondensed Matter PhysicsOpticalMaterials ChemistryElectricalMagnetic MaterialsElectronic
1991English

Effect of Annealing on Charge Transfer in Ge Nanocrystal Based Nonvolatile Memory Structure

Journal of Applied Physics
AstronomyPhysics
2009English

Fabrication of SiO2/Ge MIS Structures by Plasma Oxidation of Ultrathin Si Films Grown on Ge

2006English

Growth of Laser-Induced Damage During Repetitive Illumination of HfO2/SiO2 Multilayer Mirror and Polarizer Coatings

1997English

Luminescence of SiO2 Film Implanted With Ge Negative Ions

Transactions of the Materials Research Society of Japan
2010English

Annealing Effects on Ge/SiO2Interface Structure in Wafer-Bonded Germanium-On-Insulator Substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2011English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy